Surface morphology changes of silicon carbide by helium plasma irradiation
نویسندگان
چکیده
منابع مشابه
Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide
Silicon carbide (SiC) possesses excellent radiation tolerance, thus, SiC and its composites are promising materials for current and future nuclear systems [1]. However, the atomistic processes that underlie the irradiation response are not sufficiently understood, due largely to the limited spatial resolution of conventional analytical tools. Comparing aberration-corrected scanning transmission...
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ژورنال
عنوان ژورنال: Nuclear Materials and Energy
سال: 2018
ISSN: 2352-1791
DOI: 10.1016/j.nme.2018.06.013